dmv series ? august 1999 - ed: 2a damper + modulation diode for video symbol parameter value unit modul damper v rrm repetitive peak reverse voltage 600 1500 v i fsm surge non repetitive forward current tp = 10 ms sinusoidal dmv16 50 50 a dmv32 60 75 dmv56 60 80 t stg storage temperature range - 40 to + 150 c t j maximum operating junction temperature 150 turboswitch is a trademark of stmicroelectronics absolute ratings (limiting values, per diode) insulated to-220ab (bending option f5 available) full kit in one package high breakdown voltage capability very fast recovery diode specified turn on switching characteristics low static and peak forward voltage drop for low dissipation insulated version: insulated voltage = 2500 v rms capacitance = 7 pf planar technology allowing high quality and best electrical characteristics outstanding performance of well proven dtv as damper and turboswitch tm as modulation features and benefits high voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with e/w correction. the insulated to-220ab package includes both the damper diode and the modulation diode. assembled on automated line, it offers excellent insulating and dissipating characteristics, thanks to the internal ceramic insulation layer. description modul damper i f(av) 3 a & 6 a 5 a & 6 a v rrm 600 v 1500 v t rr 50 ns 135 ns v f (max) 1.5 v 1.35 v main product characteristics 1 2 3 damper modulation 123 1/9
symbol parameter value unit dmv16 dmv32 dmv56 r th(j-c) damper junction to case 5.3 4.8 3.6 c/w r th(j-c) modulation junction to case 6.5 5.3 5.3 r th(c) coupling 0.2 0.2 0.2 r th(j-c) total as per full i f(av) maximum ratings 6.0 5.1 4.5 thermal resistances symbol parameter test conditions value unit tj = 25c tj = 125c typ. max. typ. max. v f * forward voltage drop i f = 5 a dmv16 1.6 1.0 1.5 v i f = 6 a dmv32 1.5 1.1 1.35 i f = 6 a dmv56 1.8 1.1 1.5 i r ** reverse leakage current v r = v rrm dmv16 60 100 500 m a dmv32 100 100 1000 dmv56 100 100 1000 pulse test : * tp = 380 m s, d < 2% ** tp = 5 ms, d < 2% to evaluate the maximum conduction losses of the damper diode use the following equations : dmv16: p = 1.14 x i f(av) + 0.072 x i f 2 (rms) dmv32: p = 1.069 x i f(av) + 0.047 x i f 2 (rms) dmv56: p = 1.15 x i f(av) + 0.059 x i f 2 (rms) static electrical characteristics of the damper diodes symbol parameter test conditions value unit tj = 25c tj = 125c typ. max. typ. max. v f * forward voltage drop i f = 3a dmv16 1.4 1 1.3 v i f = 5a dmv32 1.75 1.2 1.5 i f = 5a dmv56 1.75 1.2 1.5 i r ** reverse leakage current v r = 480v dmv16 20 150 500 m a dmv32 100 600 2000 dmv56 100 600 2000 pulse test : * tp = 380 m s, d < 2% ** tp = 5 ms, d < 2% to evaluate the maximum conduction losses of the modulation diode use the following equations : dmv16: p = 1.06 x i f(av) + 0.08x i f 2 (rms) dmv32: p = 1.15 x i f(av) + 0.07 x i f 2 (rms) dmv56: p = 1.15 x i f(av) + 0.07 x i f 2 (rms) static electrical characteristics of the modulation diode ? dmv series 2/9
symbol parameter test conditions value unit typ. max. t rr reverse recovery time i f = 100ma i r = 100ma i rr = 10ma tj = 25c dmv16 1500 ns dmv32 850 dmv56 750 t rr reverse recovery time i f = 1a di f /dt = -50a/ m s v r = 30v tj = 25c dmv16 200 300 ns dmv32 130 175 dmv56 110 135 recovery characteristics of the damper diode symbol parameter test conditions value unit typ. max. t fr forward recovery time i f = 6a di f /dt = 80a/ m s v fr = 3v tj = 100c dmv16 350 ns dmv32 570 dmv56 350 v fp peak forward voltage i f = 6a di f /dt = 80a/ m s tj = 100c dmv16 25 34 v dmv32 21 28 dmv56 19 26 turn-on switching characteristics of the damper diode symbol parameter test conditions value unit typ. max. t rr reverse recovery time i f = 100ma i r = 100ma i rr = 10ma tj = 25c dmv16 210 650 ns dmv32 110 350 dmv56 110 350 t rr reverse recovery time i f = 1a di f /dt = -50a/ m s v r = 30v tj = 25c dmv16 95 ns dmv32 50 dmv56 50 recovery characteristics of the modulation diode symbol parameter test conditions value unit typ. max. t fr forward recovery time i f = 3a di f /dt = 80a/ m s v fr = 3v tj = 100c dmv16 500 ns i f = 5a di f /dt = 80a/ m s v fr = 3v dmv32 300 dmv56 300 v fp peak forward voltage i f = 3a di f /dt = 80a/ m s tj = 100c dmv16 8 v i f = 5a di f /dt = 80a/ m s dmv32 10 dmv56 10 turn-on switching characteristics of the modulation diode ? dmv series 3/9
ordering information dmvxx / f5 lead bending (option) damper and modulation diodes for video 0123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pf(av)(w) dmv16 dmv32 dmv56 ip(a) fig. 1-1: power dissipation versus peak forward current (triangular waveform, d =0.45) (damper diode.) 0123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pf(av)(w) dmv16 dmv32/dmv56 ip(a) fig. 1-2: power dissipation versus peak forward current (triangular waveform, d =0.45) (modulation diode) 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 if(av)(a) rth(j-a)=rth(j-c) dmv16 dmv32 dmv56 tamb(c) t d =tp/t tp fig. 2-1: average forward current versus ambient temperature (damper diode). 0 25 50 75 100 125 150 0 1 2 3 4 5 6 if(av)(a) dmv32/dmv56 dmv16 rth(j-a)=rth(j-c) tamb(c) t d =tp/t tp fig. 2-2: average forward current versus ambient temperature (modulation diode). ? dmv series 4/9
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.1 1.0 10.0 20.0 ifm(a) ty p i c a l tj=125c maximum tj=25c maximum tj=125c vfm(v) fig. 3-1: forward voltage drop versus forward current (damper diode) dmv16. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0.1 1.0 10.0 50.0 ifm(a) ty p i c a l tj=125c maximum tj=25c maximum tj=125c vfm(v) fig. 3-2: forward voltage drop versus forward current (damper diode)dmv32. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0.1 1.0 10.0 50.0 ifm(a) ty p i c a l tj=125c maximum tj=25c maximum tj=125c vfm(v) fig. 3-3: forward voltage drop versus forward current (damper diode)dmv56. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.1 1.0 10.0 20.0 ifm(a) ty p i c a l tj=125c maximum tj=25c maximum tj=125c vfm(v) fig. 3-4: forward voltage drop versus forward current (modulation diode)dmv16. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.1 1.0 10.0 20.0 ifm(a) ty p i c a l tj=125c maximum tj=25c maximum tj=125c vfm(v) fig. 3-5: forward voltage drop versus forward current (modulation diode)dmv32 and dmv56. 1e-3 1e-2 1e-1 1e+0 0.1 0.2 0.5 1.0 k=[zth(j-c)/rth(j-c)] tp(s) t d =tp/t tp single pulse d = 0.1 d = 0.2 d = 0.5 fig. 4: relative variation of thermal impedance junction to case versus pulse duration. ? dmv series 5/9
1e-3 1e-2 1e-1 1e+0 0 5 10 15 20 25 30 35 40 im(a) tc=100c dmv16 dmv32/dmv56 i m t d =0.5 t(s) fig. 5-2: non repetitive surge peak forward current versus overload duration (modulation diode). 1e-3 1e-2 1e-1 1e+0 0 5 10 15 20 25 30 35 40 45 im(a) tc=100c dmv56 dmv32 dmv16 t(s) i m t d =0.5 fig. 5-1: non repetitive surge peak forward current versus overload duration (damper diode). 0.1 0.2 0.5 1.0 2.0 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 qrr(c) if=if(av) 90% confidence tj=125c dmv56 dmv32 dmv16 dif/dt(a/s) fig. 6-1: reverse recovery charges versus d if /dt (damper diode). 0.1 1.0 10.0 50.0 0 50 100 150 200 250 300 350 400 450 500 qrr(nc) if=if(av) 90% confidence tj=125c dmv32/dmv56 dmv16 dif/dt(a/s) fig. 6-2: reverse recovery charges versus d if /dt (modulation diode). 0.1 0.2 0.5 1.0 2.0 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 irm(a) if=if(av) 90% confidence tj=125c dmv16 dmv32 dmv56 dif/dt(a/s) fig. 7-1: reverse recovery current versus d if /dt (damper diode). 0.1 1.0 10.0 100.0 0 1 2 3 4 5 6 7 8 9 10 irm(a) if=if(av) 90% confidence tj=125c dmv32/dmv56 dmv16 dif/dt(a/s) fig. 7-2: reverse recovery current versus d if /dt (modulation diode). ? dmv series 6/9
0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 40 45 50 vfp(v) if=if(av) 90% confidence tj=125c dmv16 dmv32 dmv56 dif/dt(a/s) fig. 8-1: transient peak forward voltage versus d if /dt (damper diode). 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16 18 20 vfp(v) if=if(av) 90% confidence tj=125c dmv32/dmv56 dmv16 dif/dt(a/s) fig. 8-2: transient peak forward voltage versus d if /dt (modulation diode). 0 20 40 60 80 100 120 140 200 250 300 350 400 450 500 550 600 650 700 tfr(ns) if=if(av) 90% confidence tj=125c vfr=3v dmv16/dmv32/dmv56 dif/dt(a/s) fig. 9-1: forward recovery time versus d if /dt (damper diode). 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 400 tfr(ns) if=if(av) 90% confidence tj=125c vfr=1.5v dmv32/dmv56 dmv16 dif/dt(a/s) fig. 9-2: forward recovery time versus d if /dt (modulation diode). 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 1.2 vfp,irm,qrr[tj] / vfp,irm,qrr[tj=125c] vfp irm qrr tj(c) fig. 10: dynamic parameters versus junction temperature (damper & modulation diodes). 1 10 100 200 1 10 100 vr(v) c(pf) tj=25c f=1mhz damper diodes modulation diodes dmv16 dmv32 dmv56 dmv16 dmv32/dmv56 fig. 11: junction capacitance versus reverse voltage applied (typical values). ? dmv series 7/9
package mechanical data to-220ab f5 option ref. dimensions millimeters inches min. max. min. max. a 15.20 15.90 0.598 0.625 a1 24.16 26.90 0.951 1.059 a3 1.65 2.41 0.064 0.094 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 l 2.65 2.95 0.104 0.116 i2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 l4 15.80 16.80 0.622 0.661 16.40 typ. 0.645 typ. m1 2.92 3.30 0.114 0.129 r1 1.40 typ. 0.055 typ. r2 1.40 typ. 0.055 typ. c2 b a1 c b2 l2 c2 a3 r2 r1 l3 b1 l4 a f l i e c1 m1 ? cooling method: by conduction (c) recommended torque value: 0.8 m.n. maximum torque value: 1 m.n. 2.2mm 2.54mm 1mm 3.1mm printed circuit layout for f5 layout ? dmv series 8/9
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the cons equences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com type marking package weight base qty delivery mode dmv16 dmv16/f5 dmv16 to-220ab 2.2 g. 50 tube dmv32 dmv32/f5 dmv32 to-220ab 2.2 g. 50 tube dmv56 dmv56/f5 dmv56 to-220ab 2.2 g. 50 tube epoxy meets ul94, v0 package mechanical data to-220ab m b l4 c b2 a2 l2 c2 l3 b1 a1 a f l i e c1 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m 2.60 0.102 cooling method: by conduction (c) recommended torque value: 0.8 m.n. maximum torque value: 1 m.n. ? dmv series 9/9
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